Thin Gesingle crystals (≤1 μm) up to 4 mm in diameter have been fabricated from epitaxialGefilmsgrown by atmospheric pressurechemical vapor deposition on Si(100) wafers. The thin Ge windows are formed by chemically etching away both the Si substrate and the region of the Gefilm near the interface that contains misfit dislocations associated with heteroepitaxialgrowth and relaxation of the Gefilms. The resulting Gefilms are comparable in crystalline quality to bulk Ge wafers, as indicated by ion channeling studies.
Grant, M. W.; Lyman, P. F.; Hoogenraad, J. H.; Carlsward, Barbara S.; Arms, D. A.; Seiberling, L. E.; and Namavar, F., "Fabrication and characterization of thin, self‐supporting germanium single crystals" (1993). Faculty Research & Creative Activity. Paper 255.